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ADE-208-178A(Z)
HSS104 Silicon Epitaxial Planar Diode for High Speed Switching
Rev. 1 Aug. 1995 Features
* Short reverse recovery time and forward recovery time. * Suitable for 5mm pitch high speed automatical insertion. * Small glass package (MHD) enables easy mounting and high reliability.
Outline
1 Cathode band
2
Ordering Information
Type No. HSS104 Cathode band Blue Package Code MHD
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current
Non-Repetitive peak forward surge current
Average forward current Power dissipation Junction temperature Storage temperature * Within 1s forward surge current.
Symbol VRM VR IFM IFSM * Io Pd Tj Tstg
Value 40 35 300 0.4 110 300 175 -65 to +175
Unit V V mA A mA mW C C
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol Min VF IR C trr -- -- -- -- Typ -- -- -- -- Max 1.2 0.5 3.0 3.0 Unit V A pF ns Test Condition IF = 100 mA VR = 35 V VR = 0.5 V, f = 1 MHz IF=10mA, VR=6V, RL=50
HSS104
10
-1
10
-6
(A)
Forward current I F
10
-2
Reverse current I R (A)
10
-7
10
-8
10
-3
10
-9
10
-4
10 0 0.6 0.2 0.8 0.4 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 1.0
-10
0
30 10 40 20 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
50
f=1MHz
10 Capacitance C (pF)
1.0
10
-1
1.0
10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage
102
HSS104
Package Dimensions
Unit: mm
26.0 Min
2.4 Max
26.0 Min 2.0 Max
1 Cathode 0.4 1 2 Cathode band (Blue) HITACHI Code JEDEC Code EIAJ Code Weight (g) MHD DO-34 -- 0.084 2 Anode

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